View FQA8N90C07_4292965.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FQA8N90C_F109 900V N-Channel MOSFET
November 2007
QFET
FQA8N90C_F109
900V N-Channel MOSFET
Features
* * * * * * * 8A, 900V, RDS(on) = 1.9 @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 12pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant
(R)
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
D
G
TO-3PN
G DS
FQA Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
Parameter
FQA8N90C_F109
900 8.0 5.1 32 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units
V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
850 8.0 24 4.0 240 1.92 -55 to +150 300
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Typ
-0.24 --
Max
0.52 -40
Units
C/W C/W C/W
(c)2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQA8N90C_F109 Rev. A
FQA8N90C_F109 900V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FQA8N90C
Device
FQA8N90C_F109
Package
TO-3PN
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
TC = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 900 V, VGS = 0 V VDS = 720 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 4.0 A VDS = 50 V, ID = 4.0 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz
(Note 4)
Min
900 -----3.0 ------
Typ
-0.95 -----1.6 5.5 1600 130 12
Max Units
--10 100 100 -100 5.0 1.9 -2080 170 15 V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 450 V, ID = 11.0A, RG = 25 ---(Note 4, 5)
40 110 70 70 35 10 14 ---530 5.8
90 230 150 150 45 ---
----
VDS = 720 V, ID = 11.0A, VGS = 10 V
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 8.0 A VGS = 0 V, IS = 8.0 A, dIF / dt = 100 A/s
(Note 4)
------
8.0 32.0 1.4 ---
A A V ns C
1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 25mH, IAS =8.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 8.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
FQA8N90C_F109 Rev. A
2
www.fairchildsemi.com
FQA8N90C_F109 900V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
Figure 2. Transfer Characteristics
10
1
10
1
ID, Drain Current [A]
ID, Drain Current [A]
150 C -55 C
o
o
10
0
10
0
25 C
o
10
-1
Notes : 1. 250s Pulse Test 2. TC = 25
Notes : 1. VDS = 50V 2. 250s Pulse Test
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
4.0
RDS(ON) [ ], Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
3.5
10
1
3.0
VGS = 10V VGS = 20V
2.5
10
0
2.0
150
25
Notes : 1. VGS = 0V 2. 250s Pulse Test
1.5
Note : TJ = 25
1.0
0
5
10
15
20
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
3000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
12
VDS = 180V
10
2500
VGS, Gate-Source Voltage [V]
VDS = 450V VDS = 720V
Capacitance [pF]
2000
Ciss
8
1500
6
Coss
1000
Notes : 1. VGS = 0 V 2. f = 1 MHz
4
500
Crss
2
Note : ID = 8A
0 -1 10
10
0
10
1
0
0
5
10
15
20
25
30
35
40
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FQA8N90C_F109 Rev. A
3
www.fairchildsemi.com
FQA8N90C_F109 900V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 4.0 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
10
10
2
Operation in This Area is Limited by R DS(on)
10 s 100 s 1 ms 10 ms DC
8
ID, Drain Current [A]
10
1
ID, Drain Current [A]
6
10
0
4
10
-1
Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse
2
10
-2
10
0
10
1
10
2
10
3
0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ ]
Figure 11. Transient Thermal Response Curve
10
0
Z JC(t), Thermal Response
D = 0 .5 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1
10
-2
10
-1
N o te s : 1 . Z J C (t) = 0 .5 2 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
PDM t1
s in g le p u ls e
t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FQA8N90C_F109 Rev. A
4
www.fairchildsemi.com
FQA8N90C_F109 900V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQA8N90C_F109 Rev. A
5
www.fairchildsemi.com
FQA8N90C_F109 900V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQA8N90C_F109 Rev. A
6
www.fairchildsemi.com
FQA8N90C_F109 900V N-Channel MOSFET
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters 7
www.fairchildsemi.com
FQA8N90C_F109 Rev. A
FQA8N90C_F109 900V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R)
(R)
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM
Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
PDP-SPMTM Power220(R)
Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM The Power Franchise(R)
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
8 FQA8N90C_F109 Rev. A
www.fairchildsemi.com

▲Up To Search▲

Price & Availability of FQA8N90C07

	To Download FQA8N90C07 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .